HFP17N10 transistor equivalent, n-channel enhancement mode field effect transistor.
* 17A, 100V, RDS(on) <70mΩ@VGS = 10 V
* High density cell design for ultra low Rdson
* Fast switching
* 100% avalanche tested
* Improved dv/dt capabil.
such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
█ Features
* 17A, 100V, R.
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance,.
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