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HFP17N10 Datasheet - HUASHAN ELECTRONIC

HFP17N10 N-Channel Enhancement Mode Field Effect Transistor

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche .

HFP17N10 Features

* 17A, 100V, RDS(on)

HFP17N10 Datasheet (1.15 MB)

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Datasheet Details

Part number:

HFP17N10

Manufacturer:

HUASHAN ELECTRONIC

File Size:

1.15 MB

Description:

N-channel enhancement mode field effect transistor.

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HFP17N10 N-Channel Enhancement Mode Field Effect Transistor HUASHAN ELECTRONIC

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