HPD650R600SA mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charge.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
650 V 9A
125 W 0.52 Ω
Symb.
HPD650R600SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switchi.
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