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HPA600R700DN - Silicon N-Channel Power MOSFET

Description

performance and enhance the avalanche energy.

Features

  • l Superior switching performance l Low on resistance(Rdson≤0.7Ω) l Low gate charge (Typical Data:26nC) l Low reverse transfer capacitances(Typical:23.8pF) l 100% Single pulse avalanche energy test.

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Datasheet Details

Part number HPA600R700DN
Manufacturer HUAJING MICROELECTRONICS
File Size 402.37 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HPA600R700DN Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET HPA600R700DN ○R General Description： HPA600R700DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features： l Superior switching performance l Low on resistance(Rdson≤0.7Ω) l Low gate charge (Typical Data:26nC) l Low reverse transfer capacitances(Typical:23.8pF) l 100% Single pulse avalanche energy test Applications： Power switch circuit of adaptor and charger.
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