l Superior switching performance l Low on resistance(Rdson≤1Ω) l Low gate charge (Typical Data:20.2nC) l Low reverse transfer capacitances(Typical:17.8pF) l 100% Single .

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

HPA600R1K0DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw.

HPA600R1K6DN

HPA600R2K3DN

HPA600R550DN

HPA600R700DN

HPA600R760MB

HPA600R800DN

HPA650R1K1DN

HPA650R1K3DN

HPA650R1K9DN

HPA650R2K8DN

HPA650R420SA

HPA650R600SA

HPA650R700DN

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