Silicon N-Channel Power MOSFET
CS10J65F A9
○R
General Description：
CS10J65F A9, the silicon N-channel Enhanced MOSFETs, is
obtained by the super junction technology which reduces the conduction
loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system
miniaturization and higher efficiency.The package type is TO-220F,
which accords with the RoHS standard.
Features：
l Fast Switching
l Low Gate Charge
l Low Reverse transfer capacitances
l 100% Single Pulse avalanche energy Test
Applications：
l Power switch circuit of adaptor and charger.
VDSS
ID
PD(TC=25℃)
RDS(ON)max
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
PD
TJ，Tstg
Drain-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Power Dissipation
Operating Junction and Storage Temperature Range
Rating
650
10
30
±30
50
32
–55…+150
650 V
10 A
32 W
0.62 Ω
Units
V
A
A
V
mJ
W
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 17V0 1
