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Silicon N-Channel Power MOSFET CS10J65 A0-G
○R
General Description：
CS10J65 A0-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system
VDSS ID PD(TC=25℃) RDS(ON)max
650 10 105 0.62
miniaturization and higher efficiency.The package type is TO-263, which accords with the RoHS standard.
V A W Ω
Features：
l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free
Applications：
l Power switch circuit of adaptor and charger.
CS10J65A0-G Datasheet
