CS10J65A0-G
Overview
： CS10J65 A0-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system VDSS ID PD(TC=25℃) RDS(ON)max 650 10 105 0.62 miniaturization and higher package type is TO-263, which accords with the RoHS standard.
