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CS10J65A0-G - Silicon N-Channel Power MOSFET

General Description

CS10J65 A0-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free.

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Datasheet Details

Part number CS10J65A0-G
Manufacturer HUAJING MICROELECTRONICS
File Size 405.68 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS10J65A0-G Datasheet

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Silicon N-Channel Power MOSFET CS10J65 A0-G ○R General Description： CS10J65 A0-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system VDSS ID PD(TC=25℃) RDS(ON)max 650 10 105 0.62 miniaturization and higher efficiency.The package type is TO-263, which accords with the RoHS standard. V A W Ω Features： l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications： l Power switch circuit of adaptor and charger.