Silicon N-Channel Power MOSFET
CS10J60F A9
○R
General Description：
CS10J60F A9, the silicon N-channel Enhanced MOSFETs,
is obtained by the super junction technology which reduces the
conduction loss, improve switching performance and enhance the
avalanche energy. The transistor can be used in various power
switching circuit for system miniaturization and higher efficiency.
The package type is TO-220F, which accords with the RoHS
standard.
VDSS
ID
PD(TC=25℃)
RDS(ON)max
Features：
l Fast Switching
l Low Gate Charge
l Low Reverse transfer capacitances
l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
600 V
10 A
25 W
0.6 Ω
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
dv/dta3
PD
TJ，Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
Rating
600
10
30
±30
125
5.0
25
–55…+150
300
Units
V
A
A
V
mJ
V/ns
W
℃
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 16V0 2
