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CS10J60A3-G - Silicon N-Channel Power MOSFET

General Description

CS10J60 A3-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free.

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Datasheet Details

Part number CS10J60A3-G
Manufacturer HUAJING MICROELECTRONICS
File Size 348.66 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS10J60A3-G Datasheet

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Silicon N-Channel Power MOSFET CS10J60 A3-G ○R General Description： CS10J60 A3-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package type is TO-251, which accords with the RoHS standard. Features： l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： VDSS ID PD(TC=25℃) RDS(ON)max 600 V 10 A 150 W 0.