HS70N06PA mosfet equivalent, n-channel mosfet.
* RDS(ON)=15mΩ@VGS=10V.
* Ultra low gate charge (typical 90nC)
* Low reverse transfer capacitance
* Fast switching capability
* 100％ avalanche energy .
The HS70N06 is three-terminal silicon device with current conduction capability of about 70A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic balla.
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