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HOTTECH

IRLML6401 Datasheet Preview

IRLML6401 Datasheet

Power MOSFET

No Preview Available !

Plastic-Encapsulate Mosfets
IRLML6401
l Ultra Low On-Resistance
l P-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
l 1.8V Gate Rated
l Lead-Free
l Halogen-Free
l Marking: 1F
*
6
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
EAS
VGS
TJ, TSTG
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
Parameter
Maximum Junction-to-Ambientƒ
Power MOSFET
VDSS = -12V
'
RDS(on) = 0.05
Max.
-12
-4.3
-3.4
-34
1.3
0.8
0.01
33
± 8.0
-55 to + 150
Typ.
75
Max.
100
Units
V
A
W
W/°C
mJ
V
°C
Units
°C/W
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-12 ––– ––– V VGS = 0V, ID = -250µA
––– -0.007 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.050
––– ––– 0.085
VGS = -4.5V, ID = -4.3A ‚
VGS = -2.5V, ID = -2.5A ‚
––– ––– 0.125
VGS = -1.8V, ID = -2.0A ‚
-0.40 -0.55 -0.95 V VDS = VGS, ID = -250µA
8.6 ––– ––– S VDS = -10V, ID = -4.3A
––– ––– -1.0
––– ––– -25
µA
VDS = -12V, VGS = 0V
VDS = -9.6V, VGS = 0V, TJ = 55°C
––– ––– -100
––– ––– 100
nA
VGS = -8.0V
VGS = 8.0V
––– 10 15
––– 1.4 2.1
ID = -4.3A
nC VDS = -10V
––– 2.6 3.9
VGS = -5.0V‚
––– 11 –––
––– 32 –––
ns
VDD = -6.0V
ID = -1.0A
––– 250 –––
RD = 6.0
––– 210 –––
RG = 89‚
––– 830 –––
VGS = 0V
––– 180 ––– pF VDS = -10V
––– 125 –––
ƒ = 1.0MHz
GUANGDONG HOTTECH INDUSTRIAL CO., LTD.
Page:P4 -P1




HOTTECH

IRLML6401 Datasheet Preview

IRLML6401 Datasheet

Power MOSFET

No Preview Available !

Plastic-Encapsulate Mosfets
IRLML6401
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
22
8.0
Max.
-1.3
-34
-1.2
33
12
Units
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = -1.3A, VGS = 0V
TJ = 25°C, IF = -1.3A
di/dt = -100A/µs ‚
D
S
‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 300µs; duty cycle 2%.
ƒ Surface mounted on 1" square single layer 1oz. copper FR4 board,
steady state.
„ Starting TJ = 25°C, L = 3.5mH
RG = 25, IAS = -4.3A.
100
10
1
0.1
0.01
0.1
VGS
TOP
-7.0V
-5.0V
-4.5V
-3.0V
-2.5V
- 1.8V
-1.5V
BOTTOM -1.0V
-1.0V
20µs PULSE WIDTH
Tj = 25°C
1 10
-VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
VGS
TOP
-7.0V
-5.0V
-4.5V
10
-3.0V
-2.5V
-1.8V
-1.5V
BOTTOM -1.0V
1
-1.0V
0.1
0.01
0.1
20µs PULSE WIDTH
Tj = 150°C
1 10
-VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100.0
10.0
TJ = 25°C
TJ = 150°C
1.0
0.1
1.0
VDS = -12V
20µs PULSE WIDTH
1.5 2.0 2.5 3.0 3.5
-VGS, Gate-to-Source Voltage (V)
4.0
Fig 3. Typical Transfer Characteristics
2.0 ID = -4.3A
1.5
1.0
0.5
0.0 VGS = -4.5V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
GUANGDONG HOTTECH INDUSTRIAL CO., LTD.
Page:P4 -P2


Part Number IRLML6401
Description Power MOSFET
Maker HOTTECH
Total Page 4 Pages
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