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REPLACEMENT TYPE :MMBT4401
FEATURES
Switching Transistor
HABT4401(NPN)
SWITCHING TRANSISTOR
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol Value
Collector-Base Voltage
VCBO
60
Collector-Emitter Voltage
VCEO
40
Emitter-Base Voltage
VEBO
6
Collector Current-Continuous IC 600
Collector Power Dissipation
PC 300
Thermal Resistance Junction to Ambient RθJA
417
Junction Temperature
TJ 150
Storage Temperature
Tstg -55 to +150
Unit
V V V mA mW °C/W °C °C
ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)
Parameter
Symbol Test conditions
Collector-Base Breakdown Voltage
VCBO
IC=100μA ,IE=0
Collector-Emitter Breakdown Voltage
VCEO
IC=1mA ,IB=0
Emitter-Base Breakdown Voltage
VEBO
IE=100μA,IC=0
Collector Cut-off current
ICEX
VCE=35V
HABT4401 Datasheet
