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BZT52C5V6S - Plastic-Encapsulate Diodes

This page provides the datasheet information for the BZT52C5V6S, a member of the BZT52C2V0S Plastic-Encapsulate Diodes family.

Features

  • Planar die construction General purpose, Medium current Ideally suited for automated assembly processes Available in Lead free version BZT52C2V0S---BZT52C39S -+ SOD-323 Maximum Ratings @ Ta=25℃ unless otherwise specified Characteristic Forward Voltage @ IF=10mA Symbol VF Value 0.9 Power Dissipation Pd 200 Thermal resistance,junction to ambient air RθjA 625 Junction temperature Tj 150 Storage temperature range Tstg -65-150 Notes: 1. Valid provided that device terminals are kept at a.

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Datasheet Details

Part number BZT52C5V6S
Manufacturer HOTTECH
File Size 270.20 KB
Description Plastic-Encapsulate Diodes
Datasheet download datasheet BZT52C5V6S Datasheet
Additional preview pages of the BZT52C5V6S datasheet.

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Full PDF Text Transcription

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Plastic-Encapsulate Diodes ZENER DIODES FEATURES Planar die construction General purpose, Medium current Ideally suited for automated assembly processes Available in Lead free version BZT52C2V0S---BZT52C39S -+ SOD-323 Maximum Ratings @ Ta=25℃ unless otherwise specified Characteristic Forward Voltage @ IF=10mA Symbol VF Value 0.9 Power Dissipation Pd 200 Thermal resistance,junction to ambient air RθjA 625 Junction temperature Tj 150 Storage temperature range Tstg -65-150 Notes: 1. Valid provided that device terminals are kept at ambient temperature. 2. Short duration test pulse used in minimize self-heating effect. 3. f = 1KHz. Unit V mW /W GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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