The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Plastic-Encapsulate Transistors
FEATURES
Excellent current-to-gain characteristics Low collector saturation voltage VCE(sat) VCE(sat)=0.5V(max) for IC/IB=2A/0.1A
2SD2150(NPN)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation
VCBO VCEO VEBO
IC PC
40 20 6 2000 500
V V V mA mW
Junction Temperature
TJ 150
Storage Temperature
Tstg -55-150
1. BASE 2. COLLECTO 3.
2SD2150 Datasheet
