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2SA812 - PNP Transistor

Features

  • Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP. (VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V 2SA812(PNP).

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Datasheet Details

Part number 2SA812
Manufacturer HOTTECH
File Size 299.61 KB
Description PNP Transistor
Datasheet download datasheet 2SA812 Datasheet
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Full PDF Text Transcription

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Plastic-Encapsulate Transistors FEATURES Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V 2SA812(PNP) MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO -60 VCEO -50 VEBO -5 IC -100 PC 200 TJ 150 Tstg -55 to +150 Unit V V V mA mW 1. BASE 2. EMITTER 3.
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