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Plastic-Encapsulate Mosfets
FEATURES
High density cell design for low RDS(ON) Voltage controlled small signal switch. Rugged and reliable. High saturation current capability.
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol
VDS VDGR VGS ID IDM (1)
PTOT Rthj- amb
Parameter
Drain-source voltage (VGSm=et0) Drain-gate voltage (RGS =e2r0 kΩ)
Gate- source voltage Drain current (continuous) at TC = 25°C Drain current (pulsed) Total dissipation at TC = 25°C Thermal resistance junction-ambient max
TJ, Tstg Operating junction temperature, Storage temperature
Ratings Unit
60 V 600 V ±015 V 0.35 A 1800 mA 80.85 W 357.1 (2) °C/W - 55 to 150 °C
2N7002K
N-Channel MOSFET
1.Gate 2.Source 3.
2N7002K Datasheet
