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HY5012A - N-Channel Enhancement Mode MOSFET

Download the HY5012A datasheet PDF. This datasheet also covers the HY5012W variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

S D G TO-247A-3L S D G TO-3P-3L Applications

Power Management for Inverter Systems.

Key Features

  • 125V/300A RDS(ON)=2.9 m  (typ. ) @ VGS=10V.
  • Avalanche Rated.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY5012W-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY5012A
Manufacturer HOOYI
File Size 612.26 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY5012A Datasheet

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Other Datasheets by HOOYI

Part Number Description
HY5012W N-Channel Enhancement Mode MOSFET
HY5204A N-Channel Enhancement Mode MOSFET
HY5204W N-Channel Enhancement Mode MOSFET
HY5608A N-Channel Enhancement Mode MOSFET
HY5608W N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HY5012W/A N-Channel Enhancement Mode MOSFET Features • 125V/300A RDS(ON)=2.9 m  (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description S D G TO-247A-3L S D G TO-3P-3L Applications  Power Management for Inverter Systems. Ordering and Marking Information N Channel MOSFET W HY5012 YYXXXJWW G A HY5012 YYXXXJWW G Package Code W : TO-247A-3L A : TO-3P-3L Date Code YYXXX WW Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS.