HY3312PM Datasheet | HOOYI

HY3312P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 125 ±25 175 -55 to 175 130 IDM Pulsed Drain Current - ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 410- - 130 93 278 139 0.54 62.5 EAS Avalanche Energy, Single Pulsed L=0.5m H Note - Repetitive rating ; pulse width limiited by junction temperature - - Drain current is limited by junction temperature - - - VD=90V 720- - - Electrical Characteristics (T C = 25°C Unless Otherwise Noted) Unit V °C °C A A A W °C/W m J Symbol Parameter Test Conditions Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain...