HY3208A - N-Channel Enhancement Mode MOSFET

HOOYI

Download the HY3208A datasheet PDF. This datasheet also covers the HY3208AP variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

HY3208A n-channel enhancement mode mosfet by HOOYI - Datasheet Preview — Note: The manufacturer provides a single datasheet file (HY3208AP-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	HY3208A
Manufacturer	HOOYI
File Size	906.72 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	HY3208A Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
HY3210B	N-Channel 100V MOSFET	VBsemi
HY3210NA2B	N-Channel Enhancement Mode MOSFET	HUAYI
HY3210NA2P	N-Channel Enhancement Mode MOSFET	HUAYI
HY3003D	N-Channel Enhancement Mode MOSFET	HUAYI
HY3003U	N-Channel Enhancement Mode MOSFET	HUAYI

Other Datasheets by HOOYI

Part Number	Description
HY3208B	N-Channel MOSFET
HY3208M	N-Channel MOSFET
HY3208P	N-Channel MOSFET
HY3208PM	N-Channel MOSFET
HY3208PS	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

HY3208AP/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 80 ±25 175 55 to- 175 120 IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 480** 120 85 227 113 0.66 62.5 EAS Avalanche Energy, Single Pulsed L=0.