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HOOYI

HY3208A Datasheet Preview

HY3208A Datasheet

N-Channel Enhancement Mode MOSFET

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HOOYI

HY3208A Datasheet Preview

HY3208A Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

HY3208AP/M/B/PS/PM
Absolute Maximum Ratings
Symbol
Parameter
Rating
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
TC=25°C
80
±25
175
55 to- 175
120
IDM Pulsed Drain Current *
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Avalanche Ratings
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
480**
120
85
227
113
0.66
62.5
EAS Avalanche Energy, Single Pulsed
L=0.5mH
Note * Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=64V
630***
Electrical Characteristics
(T
C
=
25°C
Unless
Otherwise
Noted)
Unit
V
°C
°C
A
A
A
W
°C/W
mJ
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON)* Drain-Source On-state Resistance
Diode Characteristics
VGS=0V, IDS=250µA
VDS= 80 V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±25V, VDS=0V
VGS=10V, IDS=60A
VSD*
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=60A, VGS=0V
ISD=60A, dlSD/dt=100A/µs
HY3208A
Min. Typ. Max.
80 - -
- -1
- - 10
2.0 3.0 4.0
- - ±100
- 5.5 7.0
- 0.8 1
- 46 -
- 98 -
Unit
V
µA
V
nA
m
V
ns
nC
2


Part Number HY3208A
Description N-Channel Enhancement Mode MOSFET
Maker HOOYI
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HY3208A Datasheet PDF






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