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HY3008B - N-Channel Enhancement Mode MOSFET

Download the HY3008B datasheet PDF. This datasheet also covers the HY3008P variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (HY3008P-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY3008B
Manufacturer HOOYI
File Size 2.10 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY3008B Datasheet

General Description

DS G TO-220FB-3L DS G TO-220FB-3M G DS TO-263-2L DS G TO-220MF-3L DS G TO-3PM-3L DS G TO-3PM-3S N-Channel MOSFET Ordering and Marking Information P HY3008 YYXXXJWW G M HY3008 YYXXXJWW G B HY3008 YYXXXJWW G MF HY3008 YYXXXJWW G PM HY3008 YYXXXJWW G PL HY3008 YYXXXJWW G Package Code P :TO-220FB-3L B:TO-263-2L PM:TO-3PM-3S Date Code YYXXX WW M:TO-220FB-3S MF:TO-220MF-3L PL:TO-3PM-3L Assembly Material G:Lead Free Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.

HUAYI lead -free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

Overview

HY3008P/M/B/ MF /PL/PM N-Channel Enhancement Mode MOSFET Feature z 80V/100A RDS(ON)= 6.6mΩ(typ.