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HY3007B - N-Channel Enhancement Mode MOSFET

Download the HY3007B datasheet PDF. This datasheet also covers the HY3007P variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

DS G TO-220FB-3L DS G TO-220FB-3S G DS TO-263-2L Applications

Power Management for Inverter Systems.

Key Features

  • 68V / 120 A RDS(ON)= 5.0 m (typ. ) @ V =10V GS.
  • Avalanche Rated.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY3007P-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY3007B
Manufacturer HOOYI
File Size 809.28 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY3007B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HY3007P/M/B/PS/PM Features • 68V / 120 A RDS(ON)= 5.0 m (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description DS G TO-220FB-3L DS G TO-220FB-3S G DS TO-263-2L Applications  Power Management for Inverter Systems. DS G TO-3PS-3L DS G TO-3PM-3S Ordering and Marking Information N-Channel MOSFET P HY3007 XYMXXXXXX PS HY3007 XYMXXXXXX M HY3007 XYMXXXXXX PM HY3007 XYMXXXXXX B HY3007 XYMXXXXXX Package Code P : TO-220FB-3L B: TO-263-2L PM: TO-3PM-3S M : TO-220FB-3M PS: TO-3PS-3L Date Code XYMXXXXXX Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS.