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HY1906P - N-Channel Enhancement Mode MOSFET

General Description

100% avalanche tested G Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) D S D Applications G

Power Management for Inverter Systems.

Key Features

  • 65V/130A RDS(ON) = 7.5 mΩ (typ. ) @ VGS=10V Pin.

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Datasheet Details

Part number HY1906P
Manufacturer HOOYI
File Size 2.20 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY1906P Datasheet

Full PDF Text Transcription for HY1906P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY1906P. For precise diagrams, and layout, please refer to the original PDF.

HY1906P N-Channel Enhancement Mode MOSFET Features • • • • 65V/130A RDS(ON) = 7.5 mΩ (typ.) @ VGS=10V Pin Description 100% avalanche tested G Reliable and Rugged Lead Fre...

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V Pin Description 100% avalanche tested G Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) D S D Applications G • • Switching application Power Management for Inverter Systems. S N-Channel MOSFET Ordering and Marking Information Package Code P HY1906 G ÿ YYWWJ P : TO220-3L Date Code YYWW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at

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