HY1804D - N-Channel MOSFET

HOOYI

Download the HY1804D datasheet PDF. This datasheet also covers the HY1804 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

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HY1804D n-channel mosfet by HOOYI - Datasheet Preview — Note: The manufacturer provides a single datasheet file (HY1804-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	HY1804D
Manufacturer	HOOYI
File Size	879.10 KB
Description	N-Channel MOSFET
Datasheet	HY1804D Datasheet

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Other Datasheets by HOOYI

Part Number	Description
HY1804	N-Channel MOSFET
HY1804S	N-Channel MOSFET
HY1804U	N-Channel MOSFET
HY1808AP	N-Channel MOSFET
HY1808B	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HY1804D/U/S Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient EAS Drain-Source Avalanche Energy TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C L=0.3mH Note * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=32V Rating 40 ±20 175 -55 to 175 80 320** 80 54 62.5 31.2 2.