HS50N06 mosfet equivalent, n-channel mosfet.
* RDS(ON)=19mΩ(typical)
* Ultra low gate charge (typical 30nC)
* Low reverse transfer capacitance
* Fast switching capability
* 100％ avalanche energy .
The HS50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic balla.
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