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HITANO

BAV99W Datasheet Preview

BAV99W Datasheet

SURFACE MOUNT SWITCHING DIODES

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HITANO ENTERPRISE CORP.
BAL99W, BAW56W, BAV70W, BAV99W
TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SWITCHING DIODES
VOLTAGE - 100 Volts
CURRENT - 0.15 Ampere
FEATURES
* Surface Mount Package Ideally Suited for Automatic
Insertion
* Low power loss, high efficiency
* Low leakage
* Low forward voltage drop
* High current capability
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Terminals: Solder plated, solderable per
MIL-STD-202E, Method 208 guaranteed
* Mounting position: Any
* Weight: 0.008 grams Approx.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive
load.
For capacitive load, derate current by 20%.
SOT-323
.016(0.4)
.012(0.3)
.053(1.4)
.045(1.2)
.089(2.3)
.079(2.0)
.051
(1.3)
Min
(.002.76)Min
.087(2.2)
.071(1.8)
.043(1.1)
.031(0.8)
.016(0.4)
.012(0.3)
.004
(0.10)
Max
(0.0.4137)Typ
.0010(0.25)
.0004(0.10)
Dimensions in inches and (millimeters)
Maximum Reverse Voltage
SYMBOL
VR
BAL99W
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum Average Rectified Current
Io
Peak Forward Surge Current, 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum Power Dissipation Tamb=25oC
IFSM
Ptot
Maximum Forward Voltage (@IF=10mA)
VF
Maximum Reverse Current (@VR=VR Max)
IR
Maximum Reverse Recovery Time(Note 1)
trr
Typical Junction Capacitance(Note 2)
CJ
Typical Thermal Resistance
RθJA
Operating and Storage Temperature Range
TJ,TSTG
Note: 1. Test Conditions: IF=IR=10mA, RL=100, VR=6V to IR=1mA, RL=100
2. Measured at 1MHz and VR=0
BAW56W
75
100
150
BAV70W
BAV99W
UNITS
V
V
mA
2.0 A
SINGLE(Alt)
200
1.0
2.5
6.0
4.0
357
-55 to +125
COMMON ANODE
mW
V
µA
nS
COMMON
CATHODE
pF
oC/W
oC
SERIES
BAL99W
BAW56W
BAV70W
Pin Configuration (Top View)
BAV99W




HITANO

BAV99W Datasheet Preview

BAV99W Datasheet

SURFACE MOUNT SWITCHING DIODES

No Preview Available !

RATING AND CHARACTERISTIC CURVES (BAL99W, BAW56W, BAV70W, BAV99W)
FIG.1 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
1
0.1
0.01
0.2 0.4 0.6 0.8 1.0
INSTANTANEOUS FORWARD VOLTAGE, (V)
1.2
FIG.2 - TYPICAL REVERSE CHARACTERISTICS
10
TA= 150oC
TA= 125oC
1
TA= 85oC
0.1
TA= 55oC
0.01
0.001
0
TA= 25oC
10 20 30 40
REVERSE VOLTAGE, (V)
50
FIG.3 - TYPICAL JUNCTION CAPACITANCE
6.0
4.5
3.0
1.5
0
0
24
6
REVERSE VOLTAGE, (V)
8
FIG.4 - RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT
60
V RF=2V
2nF
5kVO


Part Number BAV99W
Description SURFACE MOUNT SWITCHING DIODES
Maker HITANO
Total Page 2 Pages
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