Datasheet4U Logo Datasheet4U.com

H8205A - Dual N-Channel Enhancement-Mode MOSFET

Download the H8205A datasheet PDF. This datasheet also covers the H8205A-HI variant, as both devices belong to the same dual n-channel enhancement-mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process.

Features

  • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A.
  • High Density Cell Design for Ultra Low On-Resistance.
  • High Power and Current Handing Capability.
  • Fully Characterized Avalanche Voltage and Current.
  • Ideal for Li ion Battery Pack.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H8205A-HI-SINCERITY.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H8205A
Manufacturer HI-SINCERITY
File Size 94.67 KB
Description Dual N-Channel Enhancement-Mode MOSFET
Datasheet download datasheet H8205A Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
H8236-07 HPD (HYBRID PHOTO-DETECTOR) MODULES Hamamatsu Corporation
H8249 Side-on PMT Hamamatsu Corporation
H8249-001 Side-on PMT Hamamatsu Corporation

Other Datasheets by HI-SINCERITY

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200905 Issued Date : 2009.02.27 Revised Date : Page No. : 1/4 H8205A Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) Features • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.
Published: |