Download the H07N60E datasheet PDF.
This datasheet also covers the H07N60E-HI variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
The HSA733 is designed for use in driver stage of AF amplifier.
Key Features
High hFE and Excellent Linearity: 200 Typ. hFE(VCE=6.0,IC=1.0mA)
Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 250 mW.
Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage -60 V VCEO Collector to Emitter Voltage.
Full PDF Text Transcription for H07N60E (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
H07N60E. For precise diagrams, and layout, please refer to the original PDF.
2.03.26 Page No. : 1/3 HSA733SP PNP EPITAXIAL PLANAR TRANSISTOR Description The HSA733 is designed for use in driver stage of AF amplifier. Features • High hFE and Excellent Linearity: 200 Typ. hFE(VCE=6.0,IC=1.0mA) Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................... -55 ~ +150 °C Junction Temperature.................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) .........................................................
H07N60E Datasheet
