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H05N60E Datasheet, HI-SINCERITY

H05N60E transistor equivalent, n-channel power field effect transistor.

H05N60E Avg. rating / M : 1.0 rating-18

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H05N60E Datasheet

Features and benefits


* Higher Current Rating
* Lower RDS(on)
* Lower Capacitances
* Lower Total Gate Charge
* Tighter VSD Specifications
* Avalanche Energy Specified A.

Application

such as power suplies, converters, power motor controls and bridge circuits. Features
* Higher Current Rating
* .

Description

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switch.

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TAGS

H05N60E
N-Channel
Power
Field
Effect
Transistor
HI-SINCERITY

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