H01N60 transistor equivalent, n-channel power field effect transistor.
* 1A, 600V, RDS(on)=8Ω@VGS=10V
* Low Gate Charge 15nC(Typ.)
* Low Crss 4pF(Typ.)
* Fast Switching
* Improved dv/dt Capability
Absolute Maximum Ratings.
in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits whe.
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation.
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