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H01N60 - N-Channel Power Field Effect Transistor

Download the H01N60 datasheet PDF. This datasheet also covers the H01N60-HI variant, as both devices belong to the same n-channel power field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

Features

  • 1A, 600V, RDS(on)=8Ω@VGS=10V.
  • Low Gate Charge 15nC(Typ. ).
  • Low Crss 4pF(Typ. ).
  • Fast Switching.
  • Improved dv/dt Capability Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current (Continuous TC=25oC) Drain Current (Continuous TC=100oC) Drain Current (Pulsed).
  • 1 Gate-Source Voltage Single Pulse Avalanche Energy (L=59mH, IAS=1.1A, VDD=50V, RG=25Ω, Starting TJ=25°C) Avalanche Current.
  • 1 Rep.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H01N60-HI-SINCERITY.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H01N60
Manufacturer HI-SINCERITY
File Size 57.53 KB
Description N-Channel Power Field Effect Transistor
Datasheet download datasheet H01N60 Datasheet

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. H01N60 Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients.
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