MRF455 transistor equivalent, hg rf power transistor.
* Specified 12.5V, 30MHz Characteristics
* PO = 70W
* GP = 13 dB min. at 70 W/30 MHz
* Omnigold™ Metalization System
DIMENSIONS
D
A F
qC U1 B
H
4 α
L 3.
This device utilizes emitter ballasting and is extremely stable and capable of withstanding high VSWR under operating c.
The MRF455 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting and is extremely stable and capable of withstanding high VSWR under operating .
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