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H GSemiconductors
HG RF POWER TRANSISTOR
MRF455
ROHS Compliance,Silicon NPN POWER TRANSISTOR
DESCRIPTION
The MRF455 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting and is extremely stable and capable of withstanding high VSWR under operating conditions.
FEATURES
• Specified 12.5V, 30MHz Characteristics • PO = 70W • GP = 13 dB min. at 70 W/30 MHz • Omnigold™ Metalization System
DIMENSIONS
D
A F
qC U1 B
H
4 α
L 3
w2 M C b
A
1.Collector 2.EMITTER 3.BASE 4.EMITTER 5.FIN
c
1 H
p U2 5
w1 M A B 2
U3 Q
NOTE: ALL ELECTRODES ARE ISOLATED FROM FLANCE.
UNIT A
b
c
D D1 F
HL
p
Q q U1
mm
7.47 6.37
inches
0.294 0.251
5.82 5.56
0.229 0.219
0.18 0.10
0.007 0.004
9.73 9.
MRF455 Datasheet
