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HG Semiconductors
2SC2879HG RF POWER TRANSISTOR
ROHS Compliance,Silicon NPN POWER TRANSISTOR
DESCRIPTION
Designed primarily for 2-30MHz SSB linear power amplifier applications (low supply voltage use)
FEATURES
• Specified 12.5V, 28MHz Characteristics • PO = 100W PEP • GP = 15.2 Typ. at 100 W/28 MHz • IMD3 = -24 dBc max. at 100 W(PEP) • Omnigold™ Metalization System
DIMENSIONS
D
A F
qC U1 B
H 4
α
1 H
Lb 3 w2 M C A
c
p U2 5
D1 U3
w1 M A B 2
Q
1.Collector 2.EMITTER 3.BASE 4.EMITTER 5.FIN
NOTE: ALL ELECTRODES ARE ISOLATED FROM FLANCE.
UNIT A
b
c
mm
7.27 6.17
5.82 5.56
0.16 0.10
inches
0.286 0.243
0.229 0.219
0.006 0.004
D D1 F H L p Q q U1 U2 U3
12.86 12.83 2.67 28.45 7.93 12.59 12.57 2.41 25.52 6.32
3.30 3.05
4.45 3.91
18.42
24.90 24.63
6.48 6.22
12.32 12.06
0.
2SC2879 Datasheet
