2SC2879 transistor equivalent, hg rf power transistor.
* Specified 12.5V, 28MHz Characteristics
* PO = 100W PEP
* GP = 15.2 Typ. at 100 W/28 MHz
* IMD3 = -24 dBc max. at 100 W(PEP)
* Omnigold™ Metalization.
(low supply voltage use)
FEATURES
* Specified 12.5V, 28MHz Characteristics
* PO = 100W PEP
* GP = 15.2 Typ. .
Designed primarily for 2-30MHz SSB linear power amplifier applications (low supply voltage use)
FEATURES
* Specified 12.5V, 28MHz Characteristics
* PO = 100W PEP
* GP = 15.2 Typ. at 100 W/28 MHz
* IMD3 = -24 dBc max. at 100 W(PEP)
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