2SC2510 - Silicon NPN POWER TRANSISTOR

HGSemi

Datasheet Details

Part number	2SC2510
Manufacturer	HGSemi
File Size	410.03 KB
Description	Silicon NPN POWER TRANSISTOR
Datasheet	2SC2510 Datasheet

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HG Semiconductors 2SC2510HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR Specified 28V, 28MHz Characteristics Output Power : Po = 150W PEP (Min.) Power Gain : Gp = 12.2dB (Min.) Collector Efficiency ηC: = 35% (Min.) Intermodulation Distortion : IMD = 30dB (Max.) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage C ollector C urrent Collector Power Dissipation Junction T em perature Storage Temperature Range SYMBOL V CBO VCES VCEO V EBO IC PC Tj T stg RATING 60 60 35 4 20 250 175 65~175 ELECTRICAL CHARACTERISTICS (Tc = 25°C) UNIT V V V V A W °C °C JEDEC EIAJ TOSHIBA Weight: 5.