2SC2312 transistor equivalent, silicon npn power transistor.
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HG RF POWER TRANSISTOR
Semiconductors
ROHS Compliance,Silicon NPN POWER TRANSISTOR
2SC2312
–T
–
SEATING PLANE 4.
T S C
B
F
Q
1 2 3
A
H U Z L R J
STYLE 1: PIN 1. 2. 3. 4.
K
Specified 12V, 27MHz Characteristics PO = 18.5W GP = .
Designed for RF power amplifier on HF band mobile radio applications.
T S C
B
F
Q
1 2 3
A
H U Z L R J
STYLE 1: PIN 1. 2. 3. 4.
K
Specified 12V, 27MHz Characteristics PO = 18.5W GP = 10.5 dB min. at 18.5 W/27 MHz Emitter ballasted construction
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