HGTD7N60C3S igbt equivalent, ufs series n-channel igbt.
* 14A, 600V at TC = +25oC
* 600V Switching SOA Capability
* Typical Fall Time - 140ns at TJ = +150oC
* Short Circuit Rating
* Low Conduction Loss
Des.
operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power su.
The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a.
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