CR02AM Datasheet | HAOPIN MICROELECTRONICS

Description Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. Symbol Simplified outline a Pin 1 2 3 TAB k g TO-92 Description Cathode anode gate anode SYMBOL VDRM IT RMS ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current full sine wave Non-repetitive peak on-state current (full cycle,Tj initial=25 ) Applications: Motor control Industrial and domestic lighting Heating Static switching Features Blocking voltage to 400 V On-state RMS current to 0.47 A Ultra low gate trigger current Value 400 0.47 Unit SYMBOL Rth(j-a) PARAMETER Junction to ambient Rth(j-l) Junction to lead for DC CONDITIONS Min - - - - UNIT o C/W - o C/W http://.haopin. ¼ HAOPIN MICROELECTRONICS CO.,LTD. SCRs Limiting values in accordance with the Maximum system(IEC 134) SYMBOL PARAMETER CONDITIONS...