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FQPF4N60C - N-Channel MOSFET

Download the FQPF4N60C datasheet PDF. This datasheet also covers the FQP4N60C variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge: 15nC(Typ. )  Extended Safe Operating Area  Lower RDS(ON): 2.0Ω(Typ. ) @ VGS=10V  100% Avalanche Tested  Package: TO-220AB & TO-220F ID=4A BVDSS=600V RDS(on)=2.0Ω.
  •  、、、、、RoHS.
  •  、LCD、LED、、UPS、  、、、、、、  、、.
  •  TO-220P TO-220AB()  TO-220F TO-220FP() 4N60 Series Pin Assignment 3-Lead Plastic TO-220.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FQP4N60C-HAOHAI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number FQPF4N60C
Manufacturer HAOHAI
File Size 501.22 KB
Description N-Channel MOSFET
Datasheet download datasheet FQPF4N60C Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
4A, 600V, N FQP4N60C FQPF4N60C H4N60P H4N60F 4N60 H HAOHAI P: TO-220AB F: TO-220FP 50Pcs 4N60 Series N-Channel MOSFET 1000Pcs 5000Pcs ■Features  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge: 15nC(Typ.)  Extended Safe Operating Area  Lower RDS(ON): 2.0Ω(Typ.) @ VGS=10V  100% Avalanche Tested  Package: TO-220AB & TO-220F ID=4A BVDSS=600V RDS(on)=2.