HM75N80 mosfet equivalent, n-channel power mosfet.
* VDS=75V；ID=80A@ VGS=10V；
RDS(ON)<8mΩ @ VGS=10V
* Special process technology for high ESD capability
* Special designed for Convertors and power controls
BVDSS typ.
84
V
RDS(ON) typ.
6.5
mΩ
max.
8.0
mΩ
ID
80
A
Features
* VDS=75V；ID=80A@ VGS=10V；
RDS(ON)<8m.
Product Summary
The HM75N80 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
BVDSS typ.
84
V
RDS(ON) typ.
6.5.
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