* 6.0A, 400V, RDS(on) = 1.00Ω @VGS = 10 V
* Low gate charge ( typical 18nC)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability {D .

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in th.

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