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HM55N03D Datasheet, H&M semi

HM55N03D mosfet equivalent, n-channel enhancement mode power mosfet.

HM55N03D Avg. rating / M : 1.0 rating-11

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HM55N03D Datasheet

Features and benefits


* VDS =30V,ID =55A RDS(ON) <4.0mΩ @ VGS=10V (Typ:3.0mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current

Application

General Features
* VDS =30V,ID =55A RDS(ON) <4.0mΩ @ VGS=10V (Typ:3.0mΩ)
* High density cell design for ultra l.

Description

The HM100N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =30V,ID =55A RDS(ON) <4.0mΩ @ VGS=10V (Typ:3.0mΩ)
* High dens.

Image gallery

HM55N03D Page 1 HM55N03D Page 2 HM55N03D Page 3

TAGS

HM55N03D
N-Channel
Enhancement
Mode
Power
MOSFET
HM55
HM551
HM552
H&M semi

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