Datasheet Summary
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM50P03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
GENERAL Features
- VDS = -30V,ID = -50A RDS(ON) < 17mΩ @ VGS=-4.5V RDS(ON) < 10mΩ @ VGS=-10V
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Application
- Battery Switch
- Load switch
- Power management
S Schematic diagram
Marking and pin assignment
TO-220-3L top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
TO-220-3L
Reel Size Ø330mm
Tape width 2500...
