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HM50N06K Datasheet, H&M semi

HM50N06K mosfet equivalent, n-channel enhancement mode power mosfet.

HM50N06K Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 460.20KB)

HM50N06K Datasheet
HM50N06K Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 460.20KB)

HM50N06K Datasheet

Features and benefits


* VDS =60V,ID =50A RDS(ON) <20mΩ @ VGS=10V
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stabi.

Application

GENERAL FEATURES
* VDS =60V,ID =50A RDS(ON) <20mΩ @ VGS=10V
* High density cell design for ultra low Rdson

Description

The HM50N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES
* VDS =60V,ID =50A RDS(ON) <20mΩ @ VGS=10V
* High density cell desi.

Image gallery

HM50N06K Page 1 HM50N06K Page 2 HM50N06K Page 3

TAGS

HM50N06K
N-Channel
Enhancement
Mode
Power
MOSFET
H&M semi

Manufacturer


H&M semi

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