HM20N60A mosfet equivalent, n-channel mosfet.
l Fast Switching l Low ON Resistance(Rdson≤0.45Ω) l Low Gate Charge (Typical Data:61nC) l Low Reverse transfer capacitances(Typical: 20pF) l 100% Single Pulse avalanche .
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
.
VDSS
600
HM20N60A, the silicon N-channel Enhanced
ID
20
VDMOSFETs, is obtained by the self-aligned planar Technology
PD(TC=25℃)
250
RDS(ON)Typ
0.36
which reduce the conduction loss, improve switching
performance and enhance the avalanche.
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