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8810 Datasheet, H&M semi

8810 mosfet equivalent, dual n-channel enhancement mode power mosfet.

8810 Avg. rating / M : 1.0 rating-111

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8810 Datasheet

Features and benefits


* VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High Power and current handing capability
* Lead free product i.

Application

.It is ESD protested. General Features
* VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD R.

Description

The HM8810E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features.

Image gallery

8810 Page 1 8810 Page 2 8810 Page 3

TAGS

8810
Dual
N-Channel
Enhancement
Mode
Power
MOSFET
H&M semi

Manufacturer


H&M semi

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