HMS260N10D Datasheet - H&M Semiconductor

HMS260N10D N-Channel Super Trench II Power MOSFET

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency.

HMS260N10D Features

* VDS =100V,ID =260A RDS(ON)=2.3mΩ , typical (TO-220)@ VGS=10V RDS(ON)=2.3mΩ , typical (TO-263)@ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-22

HMS260N10D Datasheet (760.03 KB)