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HMS11N65F Datasheet - H&M Semiconductor

HMS11N65F 650V N-Channel Super Junction MOSFET

HMS11N65F Features

* Very Low FOM (RDS(on) X Qg)

* Extremely low switching loss

* Excellent stability and uniformity

* 100% Avalanche Tested

* Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 11 0.38 22.6 Unit V A Ω nC Application

HMS11N65F Datasheet (295.01 KB)

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Datasheet Details

Part number:

HMS11N65F

Manufacturer:

H&M Semiconductor

File Size:

295.01 KB

Description:

650v n-channel super junction mosfet.

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HMS11N65F 650V N-Channel Super Junction MOSFET H&M Semiconductor

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