HM9926B mosfet equivalent, dual n-channel enhancement mode power mosfet.
* VDS =20V,ID =5A RDS(ON) < 50mΩ @ VGS=4.5V RDS(ON) < 63mΩ @ VGS=2.5V
Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized.
GENERAL FEATURES
* VDS =20V,ID =5A RDS(ON) < 50mΩ @ VGS=4.5V RDS(ON) < 63mΩ @ VGS=2.5V
Schematic diagram
* H.
The HM9926B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
* VDS =20V,ID =5A RDS(ON) < 50mΩ @ VGS=4.5V RDS(ON) < 63mΩ @ VGS=2.5V
S.
Image gallery
TAGS
Download (Size : 485.03KB)