HM6N70F vdmosfets equivalent, silicon n-channel enhanced vdmosfets.
l Fast Switching l Low ON Resistance(Rdson≤2.2Ω) l Low Gate Charge
(Typical Data:18.6nC)
TO-220) G D S TO-220 G D S
l Low Reverse transfer capa.
Power switch circuit of adaptor and charger.
Absolute（ Tc= 25℃ unless otherwise specified） ：
Symbol VDSS ID IDM VGS EA.
HM6N70/F,the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switch.
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