HM6801 mosfet equivalent, dual p-channel enhancement mode power mosfet.
* VDS = -30V,ID = -2.5A RDS(ON) < 130mΩ @ VGS=-10V RDS(ON) < 180mΩ @ VGS=-4.5V
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SS Schematic diagram
G1 1 S2 2
6 5
D1 S1
* High Power and current .
GENERAL FEATURES
* VDS = -30V,ID = -2.5A RDS(ON) < 130mΩ @ VGS=-10V RDS(ON) < 180mΩ @ VGS=-4.5V
DD GG
SS Sch.
The HM6801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
* VDS = -30V,ID = .
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