HM4N10PR Datasheet, H&M Semiconductor

* VDS = 100V,ID = 4A RDS(ON) <160mΩ @ VGS=10V (Typ:136mΩ) RDS(ON) <170mΩ @ VGS=4.5V (Typ:140mΩ)
* High density cell design for ultra low Rdson
* Fully charact.

General Features
* VDS = 100V,ID = 4A RDS(ON) <160mΩ @ VGS=10V (Typ:136mΩ) RDS(ON) <170mΩ @ VGS=4.5V (Typ:140mΩ)

The HM4N10PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS = 100V,ID = 4A RDS(ON) <160mΩ @ VGS=10V (Typ:136mΩ) RDS(ON) <170mΩ.

HM4-6514-B

HM4-6516-9

HM4-65162-9

HM4-65162B-9

HM4-65162C-9

HM4-65642883

HM4-65642B883

HM4-6617B883

HM4-6642-9

HM4033

HM4052

HM4054

HM4054B