HM4450 mosfet equivalent, n-channel enhancement mode power mosfet.
*VDS =40V,ID =7.0A RDS(ON) < 24mΩ @ VGS=10V RDS(ON) < 38mΩ @ VGS=4.5V
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage a.
GENERAL FEATURES
*VDS =40V,ID =7.0A RDS(ON) < 24mΩ @ VGS=10V RDS(ON) < 38mΩ @ VGS=4.5V
* High density cell des.
The HM4450 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
*VDS =40V,ID =7.0A RDS(ON) < 24mΩ @ VGS=10V RDS(ON) < 38mΩ @ VGS=4.5V
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