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HM4444 - N-Channel Enhancement Mode Power MOSFET

Description

The HM4444 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =80V,ID =12.5A RDS(ON) < 16mΩ @ VGS=10V (Typ:13mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability Schematic diagram.

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Datasheet preview – HM4444

Datasheet Details

Part number HM4444
Manufacturer H&M Semiconductor
File Size 534.88 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM4444 Datasheet
Additional preview pages of the HM4444 datasheet.

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Full PDF Text Transcription

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HM4444 N-Channel Enhancement Mode Power MOSFET Description The HM4444 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =80V,ID =12.
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